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DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ262; BFQ262A NPN video transistors
Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC05 1997 Oct 02
Philips Semiconductors
Product specification
NPN video transistors
FEATURES * High breakdown voltages * Low output capacitance * Optimum temperature profile * Good thermal stability * Excellent reliability properties. APPLICATIONS * Buffer/driver in high-resolution colour graphics monitors. PINNING PIN 1 2 3 DESCRIPTION emitter collector base DESCRIPTION NPN video transistor in a SOT32 (TO-126) plastic package.
page
BFQ262; BFQ262A
Top view
1
2
3
MBC077 - 1
Fig.1
Simplified outline (SOT32; TO-126).
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BFQ262 BFQ262A VCER collector-emitter voltage BFQ262 BFQ262A IC Ptot hFE collector current (DC) total power dissipation DC current gain BFQ262 BFQ262A fT transition frequency BFQ262 BFQ262A Note 1. Ts is the temperature at the soldering point of the collector pin. IC = 100 mA; VCE = 10 V; f = 100 MHz; Tamb = 25 C Ts 85 C; note 1 IC = 100 mA; VCE = 10 V; Tamb = 25 C 50 20 1 0.8 60 35 1.4 1.2 - - - - GHz GHz RBE = 100 - - - - - - - - 95 110 400 5 V V mA W open emitter - - - - 100 115 V V CONDITIONS MIN. TYP. MAX. UNIT
1997 Oct 02
2
Philips Semiconductors
Product specification
NPN video transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BFQ262 BFQ262A VCEO collector-emitter voltage BFQ262 BFQ262A VCER collector-emitter voltage BFQ262 BFQ262A VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts 85 C; note 1; see Fig.3 open collector RBE = 100 open base CONDITIONS open emitter
BFQ262; BFQ262A
MIN. - - - - - - - - - -65 -
MAX. 100 115 65 95 95 110 3 400 5 +150 175 V V V V V V V
UNIT
mA W C C
CONDITIONS
VALUE 18
UNIT K/W
thermal resistance from junction to soldering point Ts 85 C; note 1
1997 Oct 02
3
Philips Semiconductors
Product specification
NPN video transistors
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO BFQ262 BFQ262A V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; IB = 0 BFQ262 BFQ262A V(BR)CER collector-emitter breakdown voltage IC = 10 mA; RBE = 100 BFQ262 BFQ262A V(BR)EBO ICES ICBO hFE emitter-base breakdown voltage collector-emitter cut-off current collector-base cut-off current DC current gain BFQ262 BFQ262A fT transition frequency BFQ262 BFQ262A Ccb collector-base capacitance IC = 100 mA; VCE = 10 V; f = 100 MHz; Tamb = 25 C; see Fig.6 IC = ic = 0; VCB = 10 V; f = 1 MHz; Tamb = 25 C; see Fig.5 IE = ie = 0; VCB = 10 V; f = 1 MHz IE = 0.1 mA; IC = 0 IB = 0; VCE = 50 V IE = 0; VCB = 50 V IC = 100 mA; VCE = 10 V; Tamb = 25 C; see Fig.4 PARAMETER collector-base breakdown voltage CONDITIONS IC = 0.1 mA; IE = 0
BFQ262; BFQ262A
MIN. 100 115 65 95 95 110 3 - - 50 20 1 0.8 -
TYP. - - - - - - - - - 60 35 1.4 1.2 2
MAX. - - - - - - - 100 20 - - - - -
UNIT V V V V V V V A A
GHz GHz pF
Cc
collector capacitance
-
3.5
-
pF
1997 Oct 02
4
Philips Semiconductors
Product specification
NPN video transistors
BFQ262; BFQ262A
handbook, halfpage
500 IC (mA)
MEA283
handbook, halfpage
6
MEA282
400
Ptot (W)
4 300
200 2 100
0 0 20 40 60 VCEO (V) 80
0 0 50 100 150 Ts (oC) 200
Fig.2 DC SOAR.
Fig.3 Power derating curve.
handbook, halfpage
70
MEA281
handbook, halfpage
6
MEA280
hFE 60
Ccb (pF) 5
4 50 3 40 2
30 0 100 200 IC (mA) 300
1
0
10
20
30 VCB (V)
40
VCE = 10 V; Tamb = 25 C.
f = 1 MHz; Tamb = 25 C.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Collector-base capacitance as a function of collector-base voltage; typical values.
1997 Oct 02
5
Philips Semiconductors
Product specification
NPN video transistors
BFQ262; BFQ262A
handbook, halfpage
2.0
MEA279
fT (GHz)
1.5 BFQ262
1.0 BFQ262A
0.5 0 50 100 IC (mA) 150
VCE = 10 V; f = 500 MHz; Tamb = 25 C.
Fig.6
Transition frequency as a function of collector current; typical values.
1997 Oct 02
6
Philips Semiconductors
Product specification
NPN video transistors
PACKAGE OUTLINE
BFQ262; BFQ262A
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E
A
P1 P D
L1
L
1 bp
2 wM
3 c Q e e1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 2.7 2.3 bp 0.88 0.65 c 0.60 0.45 D 11.1 10.5 E 7.8 7.2 e 4.58 e1 2.29 L 16.5 15.3 L1(1) max 2.54 Q 1.5 0.9 P 3.2 3.0 P1 3.9 3.6 w 0.254
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT32 REFERENCES IEC JEDEC TO-126 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-04
1997 Oct 02
7
Philips Semiconductors
Product specification
NPN video transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BFQ262; BFQ262A
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Oct 02
8
Philips Semiconductors
Product specification
NPN video transistors
NOTES
BFQ262; BFQ262A
1997 Oct 02
9
Philips Semiconductors
Product specification
NPN video transistors
NOTES
BFQ262; BFQ262A
1997 Oct 02
10
Philips Semiconductors
Product specification
NPN video transistors
NOTES
BFQ262; BFQ262A
1997 Oct 02
11
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127027/00/02/pp12
Date of release: 1997 Oct 02
Document order number:
9397 750 02892

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